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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT GaAs PHEMT 0.5um D-Mode T-Gate PHEMT 0.5um Switch PHEMT 0.5um E/D-mode PHEMT 0.25um D-Mode T-Gate PHEMT Power Process HFET GaN HEMT Integrated Passive Devices THz Schottky Diode InP HBT Technologies GaN Power Electronics Technologies GaN Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs Technologies InGaP HBT Super High fmax HBT GaAs PHEMT HFET GaN HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN HEMT Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   GaN/SiC HEMT       0.25/0.4/0.5µm GaN HEMT Process Wide band-gap GaN HEMT A Combination of high power density, high efficiency, and wide bandwidth Ideal for 5G wireless infrastructure and radar applications (PA and switches) 15, 28, and 48V PA operations Typical Applications: 5G wireless infrastructures Cable television (CATV) Military/commercial radar Military electronic warfare (EW) 5G Doherty amplifier Features: 0.5/0.4/0.25 µm optical T-Gate lithography - with source/gate field plates Psat: ~6 W/mm @ Vds = 28 V Psat: ~11 W/mm @ Vds = 48 V High drain efficiency: > 80% High breakdown voltage: > 200 V Excellent thermal conductivity Options of round or slot through-wafer vias Typical GaN Device Performance: GaN/SiC RF Switch Characteristics: Available Round & Slot Through Wafer Vias: